Plasma-assisted molecular beam epitaxy of Al(Ga)N layers...

Semiconductor Science and Technology 2014 / 06 Vol. 29; Iss. 8

Plasma-assisted molecular beam epitaxy of Al(Ga)N layers and quantum well structures for optically pumped mid-UV lasers on c-Al 2 O 3

Ivanov, S V, Nechaev, D V, Sitnikova, A A, Ratnikov, V V, Yagovkina, M A, Rzheutskii, N V, Lutsenko, E V, Jmerik, V N
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Volume:
29
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/29/8/084008
Date:
June, 2014
File:
PDF, 2.02 MB
english, 2014
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