Direct Growth of High-Quality In x...

Japanese Journal of Applied Physics 2002 / 3 Vol. 41; Iss. Part 1, No

Direct Growth of High-Quality In x Ga 1- x As Strained Layers on Misoriented GaAs Substrates Grown by Metalorganic Chemical Vapor Deposition

Liao, Chin-I., Yarn, Kao-Feng, Lin, Chien-Lien, Wang, Yeong-Her
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Volume:
41
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.41.1247
Date:
March, 2002
File:
PDF, 767 KB
english, 2002
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