Improvement of the Temperature Characteristic of 1.3 µm...

Japanese Journal of Applied Physics 2002 / 5 Vol. 41; Iss. Part 2, No

Improvement of the Temperature Characteristic of 1.3 µm GaInAsP Laser Diodes with GaInAsP/InP Short-Period Superlattice Barriers

Postigo, Pablo Aitor, Golmayo, Dolores, Gómez, Heberto, Rodríguez, Daniel, Dotor, María Luisa
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Volume:
41
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.41.L565
Date:
May, 2002
File:
PDF, 226 KB
english, 2002
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