Advanced Methodology for Fast 3-D TCAD Device/Circuit...

IEEE Transactions on Electron Devices 2015 / 3 Vol. 62; Iss. 3

Advanced Methodology for Fast 3-D TCAD Device/Circuit Electrothermal Simulation and Analysis of Power HEMTs

Chvala, Ales, Donoval, Daniel, Satka, Alexander, Molnar, Marian, Marek, Juraj, Pribytny, Patrik
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Volume:
62
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2015.2395251
Date:
March, 2015
File:
PDF, 1.33 MB
english, 2015
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