X-Ray Diffractometer for Studies on Molecular-Beam-Epitaxy...

Japanese Journal of Applied Physics 2002 / 10 Vol. 41; Iss. Part 1, No

X-Ray Diffractometer for Studies on Molecular-Beam-Epitaxy Growth of III–V Semiconductors

Takahasi, Masamitu, Yoneda, Yasuhiro, Inoue, Hirotane, Yamamoto, Naomasa, Mizuki, Jun'ichiro
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Volume:
41
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.41.6247
Date:
October, 2002
File:
PDF, 238 KB
english, 2002
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