Improvement of DC Characteristics in AlGaN/GaN...

Japanese Journal of Applied Physics 2002 / 9 Vol. 41; Iss. Part 1, No

Improvement of DC Characteristics in AlGaN/GaN Heterojunction Field-Effect Transistors Employing AlN Spacer Layer

Ide, Toshihide, Shimizu, Mitsuaki, Hara, Shinji, Cho, Dong-Hyun, Jeganathan, Kulandaivel, Shen, Xu-Qiang, Okumura, Hajime, Nemoto, Toshio
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Volume:
41
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.41.5563
Date:
September, 2002
File:
PDF, 91 KB
english, 2002
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