High-Performance 348 nm AlGaN/GaN-Based...

Japanese Journal of Applied Physics 2002 / 7 Vol. 41; Iss. Part 1, No

High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer

Lee, Young-Bae, Wang, Tao, Liu, Yu-Huai, Ao, Jin-Ping, Izumi, Yuji, Lacroix, Yves, Li, Hong-Dong, Bai, Jie, Naoi, Yoshiki, Sakai, Shiro
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Volume:
41
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.41.4450
Date:
July, 2002
File:
PDF, 173 KB
english, 2002
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