Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
2003 Vol. 21; Iss. 1
Physical and electrical properties of metal gate electrodes on HfO[sub 2] gate dielectrics
Schaeffer, J. K., Samavedam, S. B., Gilmer, D. C., Dhandapani, V., Tobin, P. J., Mogab, J., Nguyen, B.-Y., White, B. E., Dakshina-Murthy, S., Rai, R. S., Jiang, Z.-X., Martin, R., Raymond, M. V., ZavaVolume:
21
Year:
2003
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.1529650
File:
PDF, 1.46 MB
english, 2003