Modulating the Interface Quality and Electrical Properties...

ACS Applied Materials & Interfaces 2014 / 12 Vol. 6; Iss. 24

Modulating the Interface Quality and Electrical Properties of HfTiO/InGaAs Gate Stack by Atomic-Layer-Deposition-Derived Al 2 O 3 Passivation Layer

He, Gang, Gao, Juan, Chen, Hanshuang, Cui, Jingbiao, Sun, Zhaoqi, Chen, Xiaoshuang
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Volume:
6
Language:
english
Journal:
ACS Applied Materials & Interfaces
DOI:
10.1021/am506351u
Date:
December, 2014
File:
PDF, 6.69 MB
english, 2014
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