Increased Subthreshold Current due to Source–Drain Direct Tunneling in Ultrashort-Channel III–V Metal–Oxide–Semiconductor Field-Effect Transistors
Koba, Shunsuke, Maegawa, Yōsuke, Ohmori, Masaki, Tsuchiya, Hideaki, Kamakura, Yoshinari, Mori, Nobuya, Ogawa, MatsutoVolume:
6
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.6.064301
Date:
June, 2013
File:
PDF, 1.93 MB
english, 2013