Influence of Lattice Constraint from InN and GaN Substrate on Relationship between Solid Composition of In x Ga 1-x N Film and Input Mole Ratio during Molecular Beam Epitaxy
Kangawa, Yoshihiro, Ito, Tomonori, Kumagai, Yoshinao, Koukitu, Akinori, Kawaguchi, NorihitoVolume:
42
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.42.l95
Date:
February, 2003
File:
PDF, 136 KB
english, 2003