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Influence of the nucleation layer annealing atmosphere on the resistivity of GaN grown by metalorganic chemical vapor deposition
Luo, Weike, Li, Liang, Li, Zhonghui, Dong, Xun, Peng, Daqing, Zhang, Dongguo, Xu, XiaojunVolume:
633
Language:
english
Journal:
Journal of Alloys and Compounds
DOI:
10.1016/j.jallcom.2015.01.237
Date:
June, 2015
File:
PDF, 1.89 MB
english, 2015