Structure and Photoluminescence Study of InGaAs/GaAs...

Japanese Journal of Applied Physics 2003 / 3 Vol. 42; Iss. Part 1, No

Structure and Photoluminescence Study of InGaAs/GaAs Quantum Dots Grown via Cycled (InAs) n /(GaAs) n Monolayer Deposition

He, Jun, Wang, Xiao-Dong, Xu, Bo, Wang, Zhang-Guo, Qu, Sheng-Chun
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Volume:
42
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.42.1154
Date:
March, 2003
File:
PDF, 204 KB
english, 2003
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