Electrical and structural degradation of GaN high electron mobility transistors under high-power and high-temperature Direct Current stress
Wu, Y., Chen, C.-Y., del Alamo, J. A.Volume:
117
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4905677
Date:
January, 2015
File:
PDF, 1.77 MB
english, 2015