A modified structure with asymmetric and doping barrier...

Superlattices and Microstructures 2015 / 04 Vol. 80

A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold current

Li, X., Zhao, D.G., Jiang, D.S., Chen, P., Liu, Z.S., Shi, M., Zhao, D.M., Liu, W., Zhu, J.J., Zhang, S.M., Yang, H.
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Volume:
80
Language:
english
Journal:
Superlattices and Microstructures
DOI:
10.1016/j.spmi.2015.01.006
Date:
April, 2015
File:
PDF, 905 KB
english, 2015
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