First-principles calculations on Si (220) located 6H—SiC...

First-principles calculations on Si (220) located 6H—SiC (101̄0) surface with different stacking sites

He, Xiao-Min, Chen, Zhi-Ming, Pu, Hong-Bin, Li, Lian-Bi, Huang, Lei
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Volume:
23
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/23/10/106802
Date:
October, 2014
File:
PDF, 969 KB
english, 2014
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