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A CAD oriented quasi-analytical large-signal drain current model for 4H-SiC MESFETs
Quan-Jun, Cao, Yi-Men, Zhang, Yu-Ming, Zhang, Hong-Liana, Lü, Yue-Hu, Wang, Yuan-Cheng, Chang, Xiao-Yan, TangVolume:
16
Language:
english
Journal:
Chinese Physics
DOI:
10.1088/1009-1963/16/4/039
Date:
April, 2007
File:
PDF, 168 KB
english, 2007