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Probing the p-Ge 1- x Si x /Ge/p-Ge 1- x Si x quantum well by means of the quantum Hall effect
Arapov, Yu G, Harus, G I, Neverov, V N, Shelushinina, N G, Yakunin, M V, Alshanskii, G A, Kuznetsov, O AVolume:
11
Language:
english
Journal:
Nanotechnology
DOI:
10.1088/0957-4484/11/4/332
Date:
December, 2000
File:
PDF, 1.97 MB
english, 2000