In situ Eu doping into AlxGa1−xN grown by organometallic...

Optical Materials 2015 / 03 Vol. 41

In situ Eu doping into AlxGa1−xN grown by organometallic vapor phase epitaxy to improve luminescence properties

Koizumi, Atsushi, Kawabata, Kosuke, Lee, Dong-gun, Nishikawa, Atsushi, Terai, Yoshikazu, Ofuchi, Hironori, Honma, Tetsuo, Fujiwara, Yasufumi
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Volume:
41
Language:
english
Journal:
Optical Materials
DOI:
10.1016/j.optmat.2014.11.005
Date:
March, 2015
File:
PDF, 1.40 MB
english, 2015
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