Degradation of Gate Oxide Reliability due to...

Japanese Journal of Applied Physics 2004 / 3 Vol. 43; Iss. 3

Degradation of Gate Oxide Reliability due to Plasma-Deposited Silicon Nitride

Ogino, Masaaki, Sugahara, Yoshiyuki, Kuribayashi, Hitoshi, Yamabe, Kikuo
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Volume:
43
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.43.931
Date:
March, 2004
File:
PDF, 933 KB
2004
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