Al 2 O 3...

Japanese Journal of Applied Physics 2015 / 03 Vol. 54; Iss. 3

Al 2 O 3 surface passivation and MOS-gate fabrication on AlGaN/GaN high-electron-mobility transistors without Al 2 O 3 etching process

Kim, Jeong-Jin, Park, Young-Rak, Jang, Hyun-Gyu, Na, Je-Ho, Lee, Hyun-Soo, Ko, Sang-Choon, Jung, Dong-Yun, Lee, Hyung-Seok, Mun, Jae-Kyoung, Lim, Jing-Hong, Yang, Jeon-Wook
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Volume:
54
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/jjap.54.038003
Date:
March, 2015
File:
PDF, 933 KB
2015
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