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Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition
Li, Ming, Wang, Yong, Wong, Kai-Ming, Lau, Kei-MayVolume:
23
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/23/3/038403
Date:
March, 2014
File:
PDF, 803 KB
english, 2014