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Fabrication and characterization of ferroelectric-gate thin-film transistors with an amorphous oxide semiconductor, amorphous In–Ga–Zn–O
Haga, Ken-ichi, Tokumitsu, EisukeVolume:
53
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.53.111103
Date:
November, 2014
File:
PDF, 803 KB
english, 2014