High voltage AlGaN/GaN metal–oxide–semiconductor...

Applied Physics Express 2014 / 12 Vol. 7; Iss. 12

High voltage AlGaN/GaN metal–oxide–semiconductor high-electron mobility transistors with regrown In 0.14 Ga 0.86 N contact using a CMOS compatible gold-free process

Liu, Xinke, Bhuiyan, Maruf Amin, Somasuntharam, Pannirselvam S/O, Soh, Chew Beng, Liu, Zhihong, Chi, Dong Zhi, Liu, Wei, Lu, Youming, Yu, Wenjie, Tan, Leng Seow, Yeo, Yee-Chia
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Volume:
7
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.7.126501
Date:
December, 2014
File:
PDF, 625 KB
english, 2014
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