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Indium antimonide based HEMT for RF applications
Subash, T. D., Gnanasekaran, T.Volume:
35
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/35/11/113004
Date:
November, 2014
File:
PDF, 3.50 MB
english, 2014