Comparison of 1.3-µm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes with/without GaInAsP and AlGaInAs Graded-Composition Layers
Wu, Ming-Yuan, Lei, Po-Hsun, Tsai, Chia-Lung, Hu, Chih-Wei, Wu, Meng-Chyi, Ho, Wen-JengVolume:
42
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.42.l1507
Date:
December, 2003
File:
PDF, 152 KB
english, 2003