ELECTRON SCATTERING IN BURIED InGaAs/HIGH-K MOS CHANNELS

International Journal of High Speed Electronics and Systems 2011 / 03 Vol. 20; Iss. 1

ELECTRON SCATTERING IN BURIED InGaAs/HIGH-K MOS CHANNELS

OKTYABRSKY, S., NAGAIAH, P., TOKRANOV, V., YAKIMOV, M., KAMBHAMPATI, R., KOVESHNIKOV, S., VEKSLER, D., GOEL, N., BERSUKER, G.
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Volume:
20
Language:
english
Journal:
International Journal of High Speed Electronics and Systems
DOI:
10.1142/S012915641100643X
Date:
March, 2011
File:
PDF, 700 KB
english, 2011
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