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Enhanced Total Ionizing Dose Hardness of Deep Sub-Micron Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors by Applying Larger Back-Gate Voltage Stress
Zheng, Qi-Wen, Cui, Jiang-Wei, Yu, Xue-Feng, Guo, Qi, Zhou, Hang, Ren, Di-YuanVolume:
31
Language:
english
Journal:
Chinese Physics Letters
DOI:
10.1088/0256-307X/31/12/126101
Date:
December, 2014
File:
PDF, 138 KB
english, 2014