A two-dimensional fully analytical model with polarization...

Chinese Physics B 2014 / 08 Vol. 23; Iss. 8

A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor

Mao, Wei, She, Wei-Bo, Yang, Cui, Zhang, Chao, Zhang, Jin-Cheng, Ma, Xiao-Hua, Zhang, Jin-Feng, Liu, Hong-Xia, Yang, Lin-An, Zhang, Kai, Zhao, Sheng-Lei, Chen, Yong-He, Zheng, Xue-Feng, Hao, Yue
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Volume:
23
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/23/8/087305
Date:
August, 2014
File:
PDF, 3.50 MB
english, 2014
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