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Improved interfacial and electrical properties of GaSb metal oxide semiconductor devices passivated with acidic (NH 4 ) 2 S solution
Zhao, Lian-Feng, Tan, Zhen, Wang, Jing, Xu, JunVolume:
23
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/23/7/078102
Date:
July, 2014
File:
PDF, 881 KB
english, 2014