Effects of Low-Oxygen-Content Metalorganic Precursors on...

Japanese Journal of Applied Physics 2003 / 8 Vol. 42; Iss. Part 2, No

Effects of Low-Oxygen-Content Metalorganic Precursors on AlInAs and High Electron Mobility Transistor Structures with the Thick AlInAs Buffer Layer

Tanaka, Tsuyoshi, Tokudome, Kohichi, Miyamoto, Yasuyuki
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Volume:
42
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.42.L993
Date:
August, 2003
File:
PDF, 117 KB
english, 2003
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