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Design consideration and fabrication of 1.2-kV 4H-SiC trenched-and-implanted vertical junction field-effect transistors
Chen, Si-Zhe, Sheng, KuangVolume:
23
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/23/7/077201
Date:
July, 2014
File:
PDF, 785 KB
english, 2014