Design consideration and fabrication of 1.2-kV 4H-SiC...

Design consideration and fabrication of 1.2-kV 4H-SiC trenched-and-implanted vertical junction field-effect transistors

Chen, Si-Zhe, Sheng, Kuang
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
23
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/23/7/077201
Date:
July, 2014
File:
PDF, 785 KB
english, 2014
Conversion to is in progress
Conversion to is failed