Etching Damages on AlGaN, GaN and InGaN Caused by Hybrid...

Japanese Journal of Applied Physics 2003 / 7 Vol. 42; Iss. Part 1, No

Etching Damages on AlGaN, GaN and InGaN Caused by Hybrid Inductively Coupled Plasma Etch and Photoenhanced Chemical Wet Etch by Schottky Contact Characterizations

Fang, Chao-Yi, Huang, Weng-Jung, Chang, Edward Yi, Lin, Chia-Feng, Feng, Ming-Shiann
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Volume:
42
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.42.4207
Date:
July, 2003
File:
PDF, 188 KB
english, 2003
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