A unified drain current 1/ f...

Chinese Physics B 2014 / 02 Vol. 23; Iss. 2

A unified drain current 1/ f noise model for GaN-based high electron mobility transistors

Liu, Yu-An, Zhuang, Yi-Qi, Ma, Xiao-Hua, Du, Ming, Bao, Jun-Lin, Li, Cong
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Volume:
23
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/23/2/020701
Date:
February, 2014
File:
PDF, 308 KB
english, 2014
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