292 nm AlGaN Single-Quantum Well Light Emitting Diodes...

Japanese Journal of Applied Physics 2003 / 6 Vol. 42; Iss. Part 2, No

292 nm AlGaN Single-Quantum Well Light Emitting Diodes Grown on Transparent AlN Base

Hanlon, Amy, Pattison, P. Morgan, Kaeding, John F., Sharma, Rajat, Fini, Paul, Nakamura, Shuji
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Volume:
42
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.42.L628
Date:
June, 2003
File:
PDF, 149 KB
english, 2003
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