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Compact analytical model for single gate AlInSb/InSb high electron mobility transistors
Chandra, S. Theodore, Balamurugan, N. B., Subalakshmi, G., Shalini, T., Priya, G. LakshmiVolume:
35
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/35/11/114003
Date:
November, 2014
File:
PDF, 592 KB
english, 2014