GaN-Based Light Emitting Diodes with Si-Doped In...

Japanese Journal of Applied Physics 2003 / 4 Vol. 42; Iss. Part 1, No

GaN-Based Light Emitting Diodes with Si-Doped In 0.23 Ga 0.77 N/GaN Short Period Superlattice Current Spreading Layer

Kuo, Cheng-Huang, Chang, Shoou-Jinn, Su, Yan-Kuin, Wu, Liang-Wen, Chen, Jone F., Sheu, Jinn-Kong, Tsai, Ji-Ming
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Volume:
42
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.42.2270
Date:
April, 2003
File:
PDF, 147 KB
english, 2003
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