Structural Properties of GaN Films with AlN Buffer Layers...

Japanese Journal of Applied Physics 2003 / 4 Vol. 42; Iss. Part 1, No

Structural Properties of GaN Films with AlN Buffer Layers with Varying Growth Temperatures by Plasma-Assisted Molecular Beam Epitaxy

Shim, Byoung-Rho, Okita, Hideyuki, Jeganathan, Kulandaivel, Shimizu, Mitsuaki, Okumura, Hajime
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
42
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.42.2265
Date:
April, 2003
File:
PDF, 181 KB
english, 2003
Conversion to is in progress
Conversion to is failed