Increased Hole Mobility of p-GaSb/GaAs Short-Period...

Japanese Journal of Applied Physics 2003 / 4 Vol. 42; Iss. Part 1, No

Increased Hole Mobility of p-GaSb/GaAs Short-Period Superlattices Grown on InP Substrates

Kudo, Makoto, Ouchi, Kiyoshi, Kasai, Jun-ichi, Mishima, Tomoyoshi
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Volume:
42
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.42.1592
Date:
April, 2003
File:
PDF, 70 KB
english, 2003
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