Compatibility of the selective area growth of GaN nanowires...

Nanotechnology 2015 / 02 Vol. 26; Iss. 8

Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes

Musolino, M, Tahraoui, A, Fernández-Garrido, S, Brandt, O, Trampert, A, Geelhaar, L, Riechert, H
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Volume:
26
Language:
english
Journal:
Nanotechnology
DOI:
10.1088/0957-4484/26/8/085605
Date:
February, 2015
File:
PDF, 1.97 MB
english, 2015
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