Preparation of S...

Japanese Journal of Applied Physics 1997 / 9 Vol. 36; Iss. Part 1, No

Preparation of S r B i 2T a 2O 9 Film at Low Temperatures and Fabrication of a Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistor Using A l / S r B i 2T a 2O 9 /

Hirai, Tadahiko, Fujisaki, Yoshihide, Nagashima, Kazuhito, Koike, Hiroshi, Tarui, Yasuo
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Volume:
36
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.36.5908
Date:
September, 1997
File:
PDF, 1.29 MB
english, 1997
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