High-Efficiency 352 nm Quaternary InAlGaN-Based Ultraviolet...

Japanese Journal of Applied Physics 2004 / 9 Vol. 43; Iss. No. 10A

High-Efficiency 352 nm Quaternary InAlGaN-Based Ultraviolet Light-Emitting Diodes Grown on GaN Substrates

Hirayama, Hideki, Akita, Katsushi, Kyono, Takashi, Nakamura, Takao, Ishibashi, Koji
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Volume:
43
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.43.L1241
Date:
September, 2004
File:
PDF, 152 KB
english, 2004
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