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High-Efficiency 352 nm Quaternary InAlGaN-Based Ultraviolet Light-Emitting Diodes Grown on GaN Substrates
Hirayama, Hideki, Akita, Katsushi, Kyono, Takashi, Nakamura, Takao, Ishibashi, KojiVolume:
43
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.43.L1241
Date:
September, 2004
File:
PDF, 152 KB
english, 2004