Formation of Self-organized GaN Dots on Al...

Japanese Journal of Applied Physics 2004 / 6 Vol. 43; Iss. No. 6B

Formation of Self-organized GaN Dots on Al 0.11 Ga 0.89 N by Alternating Supply of Source Precursors

Ke, Wen-Cheng, Huang, Huai-Ying, Ku, Ching-Shun, Yen, Kao-Hsi, Lee, Ling, Chen, Wei-Kuo, Chou, Wu-Ching, Lee, Ming-Chih, Chen, Wen-Hsiung, Lin, Wen-Jen, Cheng, Yi-Cheng, Cherng, Ya-Tong
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Volume:
43
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.43.L780
Date:
June, 2004
File:
PDF, 168 KB
english, 2004
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