Very High Selective Etching of GaAs/Al 0.2...

Japanese Journal of Applied Physics 2004 / 6 Vol. 43; Iss. No. 6B

Very High Selective Etching of GaAs/Al 0.2 Ga 0.8 As for Gate Recess Process to Pseudomorphic High Electron Mobility Transistors (PHEMT) Applications Using Citric Buffer Solution

Liao, Chin-I, Sze, Po-Wen, Houng, Mau-Phon, Wang, Yeong-Her
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Volume:
43
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.43.L800
Date:
June, 2004
File:
PDF, 162 KB
english, 2004
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