Al 2 O 3...

Japanese Journal of Applied Physics 2004 / 5 Vol. 43; Iss. No. 6B

Al 2 O 3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers

Hashizume, Tamotsu, Anantathanasarn, Sanguan, Negoro, Noboru, Sano, Eiichi, Hasegawa, Hideki, Kumakura, Kazuhide, Makimoto, Toshiki
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Volume:
43
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.43.L777
Date:
May, 2004
File:
PDF, 134 KB
english, 2004
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