Extrinsic Base Regrowth of p-InGaN for Npn-Type GaN/InGaN Heterojunction Bipolar Transistors
Makimoto, Toshiki, Kumakura, Kazuhide, Kobayashi, NaokiVolume:
43
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.43.1922
Date:
April, 2004
File:
PDF, 209 KB
english, 2004