Reduction in Turn-on Voltage in GaInNAs and InGaAs-Based...

Japanese Journal of Applied Physics 2004 / 4 Vol. 43; Iss. 4B

Reduction in Turn-on Voltage in GaInNAs and InGaAs-Based Double-Heterojunction Bipolar Transistors

Wu, Cheng-Hsien, Su, Yan-Kuin, Wei, Shang-Chin, Chang, Shoou-Jinn, Sio, Chi-Cheong, Chen, Wei-Chang
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
43
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.43.1919
Date:
April, 2004
File:
PDF, 113 KB
english, 2004
Conversion to is in progress
Conversion to is failed