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Influence of AlN Growth Conditions on the Polarity of GaN Grown on AlN/Si(111) by Metalorganic Molecular Beam Epitaxy
Yamaguchi, Kimiaki, Tomioka, Hiroyuki, Sato, Tomonari, Souda, Ryutaro, Suemasu, Takashi, Hasegawa, FumioVolume:
43
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.43.l151
Date:
January, 2004
File:
PDF, 130 KB
english, 2004