InP Hot Electron Transistors with Emitter Mesa Fabricated...

Japanese Journal of Applied Physics 2004 / 1 Vol. 43; Iss. No. 2A

InP Hot Electron Transistors with Emitter Mesa Fabricated between Gate Electrodes for Reduction in Emitter-Gate Gate-Leakage Current

Takeuchi, Katsuhiko, Maeda, Hiroshi, Nakagawa, Ryo, Miyamoto, Yasuyuki, Furuya, Kazuhito
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Volume:
43
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.43.l183
Date:
January, 2004
File:
PDF, 372 KB
english, 2004
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