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Effects of SiN x on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility transistors
Fan, Ren, Zhi-Biao, Hao, Lei, Wang, Lai, Wang, Hong-Tao, Li, Yi, LuoVolume:
19
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/19/1/017306
Date:
January, 2010
File:
PDF, 704 KB
english, 2010